| PART |
Description |
Maker |
| MIE-516A2U 516A2U |
Infrared Emitting Diodes (UL Listed)
AlGaAs/GaAs T-1 3/4 PACKAGE INFRARED EMITTING DIODE
|
UOT[Unity Opto Technology]
|
| QED234 QED233 QED234A4R0 QED233A4R0 |
GaAs Infrared Emitting Diode
PLASTIC INFRARED LIGHT EMITTING DIODE
|
FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor Corporation
|
| OP233 OP232 OP231 |
GaAs HERMETIC INFRARED EMITTING DIODES
GaALAs Hermetic Infrared Emitting Diode(铝砷化镓密封红外发光二极工作温度范围-65 125
|
OPTEK Technologies
Optek Technology
|
| LNA2603F 0847 LN155 LNA2603FLN155 |
Opto-Electronic Device - Light Emitting Diodes - Infared Light Emitting Diodes
Infrared Light Emitting Diodes
From old datasheet system
GaAs Infrared Light Emitting Diode
|
Panasonic Corporation
Matsshita / Panasonic
PANASONIC[Panasonic Semiconductor]
|
| LNA2901L |
GaAs Infrared Light Emitting Diode 5 mm, 1 ELEMENT, INFRARED LED, 950 nm
|
Panasonic, Corp.
PANASONIC[Panasonic Semiconductor]
|
| LED55CB |
GaAs Infrared Emitting Diode; Package: TO-46; No of Pins: 2; Container: Bulk 1 ELEMENT, INFRARED LED, 940 nm
|
Fairchild Semiconductor, Corp.
|
| TSML1000 TSML1040 TSML1020 TSML1030 |
Extented Power IR Emitting Diode in SMD Package
High Power Infrared Emitting Diode, 950 nm, GaAlAs/GaAs
|
VISAY[Vishay Siliconix]
|
| LNA2802L |
GaAs Infrared Light Emitting Diode
Infrared Light Emitting Diodes
|
PANASONIC[Panasonic Semiconductor]
Matsshita / Panasonic
|
| QEE113 |
GAAS INFRARED EMITTING DIODE
|
QT[QT Optoelectronics]
|
| KEL1001L |
Infrared Emitting Diode(GaAs)
|
KODENSHI KOREA CORP.
|
| LED55BF LED56F LED55CF LED55CFLED56F LED55CFB |
GaAs INFRARED EMITTING DIODE
|
FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor Corporation
|
| LN66LLN66L LN66L |
Opto-Electronic Device - Light Emitting Diodes - Infared Light Emitting Diodes
LN66L (LN66(L)) - GaAs Infrared Light Emitting Diode
|
Panasonic
|
